Adressing lifetime effects in semiconductors is crucial for the success especially in markets like automotive applications or aircraft industry. Mostly, lifetimes are calculated based on accelerated tests by using commonly accepted activation energies. In the case of silicon carbide, these energies have to be evaluated or verified in case the silicon data should be transferred. Furthermore, the enlarged range of operating temperatures for SiC components as well as new dimensions in the dynamic performance require modified test conditions for offering reliable FIT and MTBF data.