With our simulation software from Synopsys we are able to calculate the I-V characteristics and the distributions of the potential and electric field of our devices in a pretty realistic way. Despite of the very low intrinsic concentration of Silicon Carbide the latest software version enables us to do most of our simulations at room temperature. Also area effects can be understood by doing 3-dimensional simulations. Various physical models like incomplete Ionization, anisotropic material parameters, barrier tunneling for Schottky contacts or the dynamic effects from traps in the semiconductor material can be implemented. The new tool opens up new opportunities for understanding SiC related specialities in device physics.