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Device Design and Simulation

SiCED has installed the latest version of the Synopsys 3D device Simulator

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Device Characterization

End of life tests and the Investigation of the related physical phenomena will be a major topic for future work
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WaferSiC at our parent companies

SiC Progress at Siemens and Infineon:

 

Infineon releases SiC Schottkydiodes with 1200V blocking voltage and current ratings between 5A and 15A in a TO220 real 2pin package. More information here.

 

Infineon presents its third generation of SiC Schottkydiodes with a considerable add on for a further increase of the efficiency in power supplies. More information here.

 

1200V/600A IGBT Module FF600R12IS4F for high frequency switching, empowered by SiC diodes, available from Infineon, please refer to the Infineon power device web-site , section IGBT-Modules.

 

Infineon released 1200 V SiC Schottky Barrier Diode

Siemens released the first commercial motor drive inverter using SiC power devices.