SiCED is working on different types of discrete power devices.

Schottkybarrier diodes have reached a mature status, the second generation of these diodes is available as a commercial product from our parent company Infineon. SiCED focuses on higher power ratings (up to 50A per chip) as well as on higher blocking voltages, e.g. 1700V.

Regarding switching devices, unipolar structures like MOSFETs, VJFETs and SITs are under investigation. The most mature structure today is our lateral-vertical JFET concept.

High voltage is for SiCED the range of blocking voltages exceeding 3kV. We worked on concepts for diodes with 3.3kV blocking voltages (see alos the list of publications) as well as on 6.5kV bipolar diodes for higher pwoer ratings. Some basic studies about high voltage switching devices were performed, finalized by demonstrators of our BiFET Technology up to 4.5kV or a stacked solution based on standard VJFETs with an Ubr up to 9kV tested. Today, the main focus is on the 6.5kV bipolar diode technology and the support of studies regarding the stacked switch proposal.