Epitaxial Growth

• More than 15 years experience
  
• Involved in pilot process and equipment development with leading equipment manufacturers
  
• 6 x 100mm / 7 x 3“ multiwafer growth chamber
• 10x100mm / 6x150mm reactor will go in operation soon
• Access to hot wall equipment for thick layers
  
• n- and p-type layers
  
• characterization of doping and thickness via automated mapping systems

In 2008, a new reactor, based on AIXTRONS G4 platform, will be installed at SiCED. With this new equipment, we are not only able to enlarge our 100mm capability from today 6x100mm to 10x100mm, but we are also prepared for upcoming wafer diameters up to 150mm. The decision is a key step fot the future success of the SiC technology, where epitaxial growth will become the crucial process step in order to achieve attractive device costs and high yields alos for larger chip  sizes. More details can be found in the AIXTRON-press release.