SiC Schottky Diode

Schottky diodes have excellent switching characteristics. Silicon Schottky diodes are available up to 200 V only. For higher operating voltages bipolar diodes are used. Due to their reverse recovery charge they cause very high switching losses during turn-off. This is the key limiting factor for pulse frequency in power electronics.

With SiC Schottky diodes SiCED has realized blocking voltages up to 3300 V. Due to the lack of recovery charge Schottky Diodes in SiC technology make very high pulse frequencies possible. Switching losses in the diode are negligible, turn-on switching losses in a related switch become dramatically reduced. The soft switching characteristics guarantee good EMC behavior.

Comparison of Switching Behavior @ Tj = 125 °C:

Minimized switching losses make high pulse frequencies possible
higher efficieny, smaller equipment size

Prototype modules containing SiC Schottkybarrier diodes, realized by SiCED in Cooperation with packaging partners.

Recently, SiCED presented it's most powerful diode chip - a 4.8x4.8mm die, capable of handling about 50A. Due to the proprietary technology, this chip is much smaller than devices made in silicon or from competitors in the SiC world regarding diodes of comparable performance. The following picture depicts typical forward characteristics.

The reverse current at 1200V is typically less than 500µA with only a marginal increase with temperature. For samples please refer to our contact form.

Products available by Infineon

Siemens product using SiC Schottky barrier diodes